Kingston Technology ValueRAM 4GB DDR3-1600 memory module 1 x 4 GB 1600 MHz
Roll over image to zoom inClick to Open expanded view
Print
Model: KVR16S11S8/4
EAN: 740617207781

Kingston Technology ValueRAM 4GB DDR3-1600 memory module 1 x 4 GB 1600 MHz

Manufacturer:
Kingston Technology
Kingston Technology ValueRAM 4GB DDR3-1600, 4 GB, 1 x 4 GB, DDR3, 1600 MHz, 204-pin SO-DIMM
Please log in to see your price
Included in the cost of this product is the WEEE recycling charge.

Click here for details

Related products

Description

Kingston Technology ValueRAM 4GB DDR3-1600. Component for: Laptop, Internal memory: 4 GB, Memory layout (modules x size): 1 x 4 GB, Internal memory type: DDR3, Memory clock speed: 1600 MHz, Memory form factor: 204-pin SO-DIMM, CAS latency: 11
  • JEDEC 1.5V Power Supply
  • VDDQ = 1.5V
  • 800MHz fCK for 1600Mb/sec/pin
  • 8 independent internal banks
  • Programmable CAS latency: 11, 10, 9, 8, 7, 6, 5
  • Programmable Additive Latency: 0, CL - 2, or CL - 1 clock
  • 8-bit pre-fetch
  • Burst Length: 8 (interleave without any limit, sequential with starting address “000” only), 4 with tCCD = 4 which does not allow seamless read or write (either on the fly using A12 or MRS)
  • Bi-directional Differential Data Strobe
  • Internal (self) calibration: Internal self calibration through ZQ pin (RZQ: 240 ohm ± 1%)
  • On Die Termination using ODT pin
  • Average Refresh Period 7.8us at lower than TCASE 85°C, 3.9us at 85°C < TCASE < 95°Cº
  • Asynchronous Reset
  • PCB: Height 1.180” (30.00mm), double sided component

Product Properties

  • Model
  • KVR16S11S8/4
  • EAN
  • 740617207781
  • Bullet points
  • Point
  • 8 independent internal banks
    8-bit pre-fetch
    800MHz fCK for 1600Mb/sec/pin
    Asynchronous Reset
    Average Refresh Period 7.8us at lower than TCASE 85°C, 3.9us at 85°C < TCASE < 95°Cº
    Bi-directional Differential Data Strobe
    Burst Length
    Internal (self) calibration: Internal self calibration through ZQ pin (RZQ: 240 ohm ± 1%)
    JEDEC 1.5V Power Supply
    On Die Termination using ODT pin
    PCB: Height 1.180” (30.00mm), double sided component
    Programmable Additive Latency: 0, CL - 2, or CL - 1 clock
    Programmable CAS latency: 11, 10, 9, 8, 7, 6, 5
    VDDQ = 1.5V
  • Features
  • Buffered memory type
  • Unregistered (unbuffered)
  • CAS latency
  • 11
  • Component for
  • Laptop
  • Country of origin
  • Taiwan
  • ECC
  • No
  • Internal memory
  • 4 GB
  • Internal memory type
  • DDR3
  • Lead plating
  • Gold
  • Memory bus
  • 64 bit
  • Memory clock speed
  • 1600 MHz
  • Memory form factor
  • 204-pin SO-DIMM
  • Memory layout (modules x size)
  • 1 x 4 GB
  • Memory ranking
  • 1
  • Memory voltage
  • 1.5 V
  • Module configuration
  • 512M x 64
  • Refresh row cycle time
  • 260 ns
  • Row active time
  • 35 ns
  • Row cycle time
  • 48.125 ns
  • Logistics data
  • Harmonized System (HS) code
  • 84733020
  • Operational conditions
  • Operating temperature (T-T)
  • 0 - 85 °C
  • Storage temperature (T-T)
  • -55 - 100 °C
  • Other features
  • Bus clock rate
  • 1600 MHz
  • Chips organisation
  • x8
  • Error indication
  • No
  • Internal memory
  • 4096 MB
  • Memory layout
  • 1 x 4096 MB
  • Packaging data
  • Package type
  • SO-DIMM
  • Weight & dimensions
  • Height
  • 30 mm
  • Width
  • 67.6 mm
Similar products
Recently Viewed